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| 1200V thinQ! Features: * * * * * TM IDC05S120E SiC Schottky Diode Applications: * * * * Motor Drives / Solar Inverters High Voltage CCM PFC Switch Mode Power Supplies High Voltage Multipliers A Revolutionary Semiconductor Material Silicon Carbide Switching Behaviour Benchmark No Reverse Recovery / No Forward Recovery Temperature Independent Switching Behaviour Qualified According to JEDEC1) Based on Target Applications C Chip Type IDC05S120E VBR 1200V IF 5A Die Size 1.692 x 1.692 mm2 Package sawn on foil Mechanical parameters Raster size Anode pad size Area total Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 1.692 x 1.692 1.156 x 1.156 2.86 362 100 2360 Photoimide 3200 nm Al Ni Ag -system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, 350m 0.3 mm Store in original container, in dry nitrogen, in dark environment, < 6 month at an ambient temperature of 23C m mm mm2 Edited by INFINEON Technologies, AIM IMM, Rev. 2.1, 28.01.2009 IDC05S120E Maximum Ratings Parameter Repetitive peak reverse voltage DC blocking voltage Continuous forward current, limited by Tvjmax Surge non repetitive forward current, sine halfwave Repetitive peak forward current, limited by thermal resistance Rth Non-repetitive peak forward current i 2 t value Operating junction and storage temperature range Symbol VRRM VDC IF IF,SM IF,RM IF,max Tvj < 150C TC =25C , tP =10 ms TC =150C , tP =10 ms TC = 100C , Tvj = 1 50 C , D=0 . 1 TC =25C , t P =1 0s TC =25C , tP =10 ms TC =150C , tP =10 ms Condition Tvj = 25 C Value 1200 1200 5 29 25 23 110 4 3 -55...+175 A2s C A Unit V i dt 2 Tvj , Tstg Static Characteristics (tested on wafer) Parameter Reverse current Diode forward voltage Symbol IR VF Conditions V R =12 00 V , T v j =2 5C I F =5 A, T v j =2 5C Value min. Typ. 5 1.6 max. 120 1.8 Unit A V Static Characteristics (not subject to production test - verified by design / characterization) Parameter Reverse current Diode forward voltage Symbol IR VF Conditions V R =12 00 V , T v j =1 50C I F =5 A, T v j =1 50C Value min. Typ. 20 2.5 max. 1000 3 Unit A V Edited by INFINEON Technologies, AIM IMM, Rev. 2.1, 28.01.2009 IDC05S120E Dynamic Characteristics (not subject to production test - verified by design / characterization) Parameter Total capacitive charge3) Symbol Conditions Value min. Typ. 18 max. Unit QC IF IF,max d i /d t= 200 A/ s V R =12 00 V T v j =1 50C nC Switching time2) tc T v j =1 50C V R =1 V 250 20 18 <10 ns Total capacitance C f=1 MH z V R =30 0 V V R =60 0 V pF J-STD20 and JESD22 tc is the time constant for the capacitive displacement current waveform (independent from T v j , ILOAD and di/dt), different from trr, which is dependent on T v j , ILOAD, di/dt. No reverse recovery time constant trr due to absence of minority carrier inject. 3) Only capacitive charge occurring, guaranteed by design (independent from T v j , ILOAD and di/dt). 2) 1) Edited by INFINEON Technologies, AIM IMM, Rev. 2.1, 28.01.2009 IDC05S120E Chip drawing A A: Anode pad Edited by INFINEON Technologies, AIM IMM, Rev. 2.1, 28.01.2009 IDC05S120E Description AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Edited by INFINEON Technologies, AIM IMM, Rev. 2.1, 28.01.2009 |
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